1. “A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation”, ACS Nano 2016

2. “Improved Sidewall Doping of extensions by AsH3 Ion Assisted deposition and Doping (IADD) with small implant angle for scaled NMOS si bulk FinFETs”, IEDM 2013

3. “Heated implantation with amorphous Carbon CMOS mask for scaled FinFET”, 2013, VLSI

4. “Post-Litho line edge/width roughness smoothing by ion implantation”, 2013, SPIE

5. “Process characterization of a novel conformal FinFET doping”, 2012, AIP Conefernce proceeding

6. “Ion Energy Distributions Measured Inside a High-Voltage Cathode in a BF3 Pulsed DC Plasma Used for Plasma Doping: Experiments and ab Initio Calculations”, L. Godet, S. Radovanov, J. Scheuer, C.Cardinaud, N. Fernandez, Y. Ferro and G. Cartry, Plasma Sources Science and Technology, 21, 2012, 065006

7. “Measurements and Modeling of Electron Energy Distributions in the Afterglow of a Pulsed Discharge in BF3″, Z. Nikitovic, S. Radovanov, L. Godet, Z. Raspopovic, O. Sasic, V. Stojanovic, Z. Lj. Petrovic, EPL, 95 (2011) 45003

8. “Ion Implant Enabled 2x Lithography”, P. Martin, L. Godet, A. Cheung, G. de Cock, C. Hatem, AIP Conf. Proc. 1321, 171 (2011)

9. “Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques”, G. Papasouliotis, L. Godet, V. SIngh, R. Muira, H. Ito, AIP Conf. Proc. 1321, 146 (2011)

10. “Optimization and Control of Plasma Doping Processes”, D. Raj, L. Godet, N. Chamberlain, K. Hadidi, V. Singh, G. Papasouliotis, AIP Conf. Proc. 1321, 142 (2011)

11. “Ultra-shallow junction formation using plasma doping techniques”, L. Godet, G.D. Papasouliotis, A. Kontos, T. Miller, V. Singh, Varian, USA, 2009, JVST

12. “Ultra-shallow junction formation using flash annealing and advanced doping techniques”, J. Gelpey, S. McCoy, A. Kontos, L. Godet, C. Hatem and al, Junction Technology, 15 may 2008, IEEE page 82-86

13. “Investigation of platinum silicide Schottky barrier height modulation using dopant segregation approach”, N. Breil, A. Halimaoui, E. Dubois, E. Lampin, G. Larrieu, L. Godet, G. Papasouliotis and T. Skotnicki, Material Research Society, Vol 1070, 2008

14. “Approaches to USJ formation by Molecular Implantation”, C. Hatem, L. Godet, A. Kontos, G. Papasouliotis, J. England, and E. Arevalo, AIP Conf. Proc. 1066, 399-402

15. “Plasma Doping – Enabling Technology for High Dose Logic and Memory Applications”, T. Miller, L. Godet, G. Papasouliotis, V. Singh, IIT 2008 proceeding, AIP Conf. Proc. 1066, 457

16.“Low energy ion implantation using non-equilibrium glow discharge”, S. Radovanov, Ludovic Godet, Workshop on Non-equilibrium Processes in Plasma Physics and Studies of the Environment IOP Publishing Journal of Physics: Series 71 (2007) 012014 doi:10.1088/1742-6596/71/1/012014

17. “Advanced optimization and process control of plasma doping apparatus”, V. Singh, L.Godet, T. Miller, R. Dorai, G. D.Papasouliotis, 2007, Physica status solidi. C. Current topics in solid state physics, 2008, vol. 5, no4, pp. 911-914

18. “Enhanced performance of PMOS MUGFET via integration of conformal plasma-doped source/drain extensions”, D. Lenoble and al, VLSI 2006

19. “Plasma doping implant depth profile calculation based on ion energy distribution measurements”, Ludovic Godet, Z. Fang, S. Walther, S. Radovanov, E. Arevalo, J. Scheuer, G. Cartry, C. Cardinaud, F. Lallement, D. Lenoble, JVST B 24, p 2391 – 2397

20. “Plasma treatment of bulk niobium surface for SRF cavities”, M. Rašković, L. Vušković, S. Popović, L. Phillips, A.-M. Valente-Feliciano, S.B. Radovanov and L. Godet, Nuclear Instruments and Methods in Physics Research Section A, Oct 2006

21. “Ion Energy Distribution in a Pulsed Plasma Doping System,” S. Radovanov, L. Godet, R. Dorai , Z. Fang, B.W. Koo, C. Cardinaud, G. Cartry, D. Lenoble and A. Grouillet, J. Applied Physics 98 113307

22. “Effect of plasma chemistry and sheath conditions on near surface boron depth profiles,” Steve Walther, Ludovic Godet, Temel Buyuklimanli and John Weeman, USJ 2005 conference, JVST B 24, p 489-493

23. “Plasma Diagnostics in Pulsed Plasma Doping (PLAD) System,” B.-W. Koo, Z. Fang, L. Godet, S. Radovanov, C. Cardinaud, G. Cartry, A. Grouillet, D. Lenoble, IEEE, April 2004, Vol. 32, Number 2

24. “Fabrication of N+/P ultra-shallow junctions by plasma doping for 65nm CMOS technology,” F. Lallement, A. Grouillet, M. Juhel, J.-P. Reynard, D. Lenoble, Z. Fang, S. Walther, Y. Rault, L. Godet and J. Scheuer, Surface & Coating Technology, Vol. 186, August 2004, p.17

25. “USJ formation using pulsed plasma doping,” J. T. Scheuer, D. Lenoble, J.-P. Reynard, F. Lallement, A. Grouillet, A. Arevalo, D. Distaso, D. Downey, Z. Fang, L. Godet, B.W. Koo, T. Miller and J. Weeman, Surface & Coating Technology, Vol. 186, August 2004, p. 57

26. “Ultra-Low Cost and high performance 65nm CMOS device fabricated with Plasma Doping,” F. Lallement, B. Duriez, A. Grouillet, F. Arnaud, B. Tavel, F. Wacquand, P. Stolk, M. Woo, Y. Erokhin, J. Scheuer, L. Godet, J. Weeman & al, VLSI 2004

27. “Wet Chemical Etching of Pb(ZrTi)O3 Ferroelectric Thin Film for Optical Waveguide Application“, H.W. Gundel, J. Cardin, D. Averty, L. Godet, D. Leduc, C. Boisrobert, Taylor and Francis, Vol 288, p 303-313, 2003