Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition …
US 9,512,517: Multiple Exposure Treatment for Processing a Patterning Feature
A method for processing a substrate may include providing a patterning feature on the substrate, the patterning feature having a …
US 9,502,262: Nanocrystalline Diamond Carbon Film for 3D NAND Hardmask Application
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. …
US 9,502,258: Anisotropic Gap Etch
A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap …
US 9,480,140: Material Modification by Neutral Beam Source with Selected Collision Angle
A neutral beam is scanned across a workpiece surface and the beam angle is controlled in a manner that avoids …
US 9,460,961: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the …
US 9,412,613: Development of High Etch Selectivity Hardmask by Ion Implantation in Carbon Films
Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with …
US 9,396,965: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a metal layer on a substrate may include providing a hydrogen-containing gas and …
US 9,385,219: Method and Apparatus for Selective Deposition
Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition …
US 9,382,625: Remote Plasma Source Based Cyclic CVD Process for Nanocrystalline Diamond Deposition
Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a …
US 9,379,021: Method to Reduce K Value of Dielectric Layer for Advanced FinFET Formation
Embodiments described herein generally relate to methods for forming gate structures. Various processes may be performed on a gate dielectric …
US 9,340,877: Method and System for Modifying Photoresist using EM Radiation and Implantation
A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a …
US 9,280,070: Field guided exposure and post-exposure bake process
Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the …
US 9,268,228: Techniques for Patterning a Substrate
Various techniques for patterning a substrate are disclosed. Specifically, implantation of the first species into an anti-reflective coating layer is …
US 9,240,350: Techniques for Forming 3D Structures,
A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a …
US 9,236,257: Techniques to Mitigate Straggle Damage to Sensitive Structures
A method for processing a substrate includes providing a set of patterned structures separated by a first gap on the …
US 9,214,377: Methods for Silicon Recess Structure in a Substrate by Utilizing a Doping Layer
Embodiments of the present invention provide a methods for forming silicon recess structures in a substrate with good process control, …
US 9,190,498: Technique for Forming a FinFET Device using Selective Ion Implantation
A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on …
US 9,136,096: Three-Dimensional Metal Deposition Technique
A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a …
US 9,123,509: Techniques for Plasma Processing a Substrate
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a …
US 9,118,001: Techniques for Treating Sidewalls of Patterned Structures using Angled Ion Treatment
In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned …
US 20120213941: Ion-assisted Plasma Treatment of a Three-dimensional Structure
[Application] A boundary between a plasma and a plasma sheath is controlled such that a portion of the shape is …
US 20120295444: Techniques for Forming 3D Structures
[Application] A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as …
US 20120263887: Technique and Apparatus for Ion-Assisted Atomic Layer Deposition
[Application] An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as …
US 20110300696: Method for Damage-Free Junction Formation
[Application] Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or …
US 20120309180: Method of Forming a Retrograde Material Profile Using Ion Implantation
[Application] A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the …
US 8,133,804: Method and system for modifying patterned photoresist using multi-step ion implantation
[Granted] A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes …
US 8,354,655: Method and System for Controlling Critical Dimension and Roughness in Resist Features
[Granted] A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The …
US 8,435,727: Method and system for modifying photoresist using electromagnetic radiation and ion implantation
[Granted] A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having …
US 8,460,569: Method and system for post-etch treatment of patterned substrate features
[Granted] A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set …
US 8,698,109: Method and System for Controlling Critical Dimension and Roughness in Resist Features
[Granted] A computer readable storage medium containing program instructions for treating a photoresist relief feature on a substrate having an …
US 8,778,603: Method and System for Modifying Substrate Relief Features Using Ion Implantation
[Granted] A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned …
US 8,603,591: Enhanced Etch and Deposition Profile Control using Plasma Sheath Engineering
[Granted] A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition …
US 8,815,720: Method of Etching a Workpiece
[Granted] A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then …
US 8,858,816: Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering
[Granted] A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition …
US 7,927,986: Ion implantation with heavy halogenide compounds
[Granted] A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a …
US 8,124,506: USJ techniques with helium-treated substrates
[Granted] A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant …
US 8,372,735: USJ Techniques with Helium-Treated Substrates
[Granted] A method of using helium to create ultra-shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. …
US 8,679,960: Technique for Processing a Substrate Having a Non-planar Surface
[Granted] A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles …
US 8,742,373: Method of Ionization
[Granted] A plasma is formed from one or more gases in a plasma chamber using at least a first power …
US 8,288,741: Apparatus and Method for Three Dimensional Ion Processing
[Granted] A method for treating a workpiece. The method includes directing a first ion beam to a first region of …