Methods for forming fin structure with desired materials formed on different locations of the fin structure using a selective deposition …
US 9,514,918: Guard Aperture to Control Ion Angular Distribution in Plasma Processing
A guard aperture is described to control the ion angular distribution in plasma processing in one example a workpiece processing …
US 9,512,517: Multiple Exposure Treatment for Processing a Patterning Feature
A method for processing a substrate may include providing a patterning feature on the substrate, the patterning feature having a …
US 9,502,262: Nanocrystalline Diamond Carbon Film for 3D NAND Hardmask Application
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. …
US 9,502,258: Anisotropic Gap Etch
A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap …
US 9,480,140: Material Modification by Neutral Beam Source with Selected Collision Angle
A neutral beam is scanned across a workpiece surface and the beam angle is controlled in a manner that avoids …
US 9,460,961: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the …
US 9,425,027: Methods of Affecting Material Properties and Applications
Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus with …
US 9,412,613: Development of High Etch Selectivity Hardmask by Ion Implantation in Carbon Films
Embodiments described herein provide for a method of forming an etch selective hardmask. An amorphous carbon hardmask is implanted with …
US 9,396,965: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a metal layer on a substrate may include providing a hydrogen-containing gas and …
US 9,385,219: Method and Apparatus for Selective Deposition
Methods for forming fin structures with desired materials formed on different locations of the fin structure using a selective deposition …
US 9,382,625: Remote Plasma Source Based Cyclic CVD Process for Nanocrystalline Diamond Deposition
Methods for making a nanocrystalline diamond layer are disclosed herein. A method of forming a layer can include activating a …
US 9,379,021: Method to Reduce K Value of Dielectric Layer for Advanced FinFET Formation
Embodiments described herein generally relate to methods for forming gate structures. Various processes may be performed on a gate dielectric …
US 9,377,692: Electric/magnetic Field Guided Acid Diffusion
Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid …
US 9,366,966: Electric/magnetic Field Guided Acid Profile Control in a Photoresist Layer
Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. In one example, a method …
US 9,340,877: Method and System for Modifying Photoresist using EM Radiation and Implantation
A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having a …
US 9,336,998: Apparatus and Method for Dynamic Control of Ion Beam Energy and Angle
In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an …
US 9,293,301: In Situ Control of Ion Angular Distribution in a Processing Apparatus
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma …
US 9,288,889: Apparatus and Techniques for Energetic Neutral Beam Processing,
A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber …
US 9,280,070: Field guided exposure and post-exposure bake process
Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the …
US 9,268,228: Techniques for Patterning a Substrate
Various techniques for patterning a substrate are disclosed. Specifically, implantation of the first species into an anti-reflective coating layer is …
US 9,253,868: Neutral Beam Source with Plasma Sheath-Shaping Neutralization
A neutral beam source has a plasma sheath-shaping neutralization grid that shapes a plasma sheath near a beam-forming slit of …
US 9,240,350: Techniques for Forming 3D Structures,
A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as a …
US 9,236,257: Techniques to Mitigate Straggle Damage to Sensitive Structures
A method for processing a substrate includes providing a set of patterned structures separated by a first gap on the …
US 9,232,628: Method and System for Plasma –Assisted Ion Beam Processing
A system for processing a substrate may include a first chamber operative to define a first plasma and a second …
US 9,214,377: Methods for Silicon Recess Structure in a Substrate by Utilizing a Doping Layer
Embodiments of the present invention provide a methods for forming silicon recess structures in a substrate with good process control, …
US 9,190,498: Technique for Forming a FinFET Device using Selective Ion Implantation
A three-dimensional structure disposed on a substrate is processed so as to alter the etch rate of material disposed on …
US 9,136,096: Three-Dimensional Metal Deposition Technique
A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a …
US 9,123,509: Techniques for Plasma Processing a Substrate
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a …
US 9,118,001: Techniques for Treating Sidewalls of Patterned Structures using Angled Ion Treatment
In one embodiment a method of method of treating a sidewall layer of a patterned feature includes providing the patterned …
US 9,062,367: Plasma Processing of Workpieces to Form a Coating
A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is …
US 9,024,282: Techniques and Apparatus for High Rate Hydrogen Implantation and Co-implant
An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions …
US 9,024,273: Method to Generate Molecular Ions from Ions with a Smaller Atomic Mass
An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is …
US 8,974,683: Method and System for Modifying Resist Openings using Multiple Angled Ions
A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises …
US 8,969,181: Method for Epitaxial Layer Overgrowth
Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions …
US 8,952,344: Techniques for Processing Photoresist Features using Ions
A method of treating a substrate includes directing first ions over a first range of angles to one or more …
US 8,946,061: Engineering of Porous Coatings Formed by Ion-assisted Direct Deposition
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that …
US 8,937,004: Apparatus and Method for Controlling Implanting Workpieces
A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the …
US 20090124064: Particle Beam Assisted Modification Of Thin Film Materials
[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 20090124065: Particle Beam Assisted Modification Of Thin Film Materials
[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 20120137971: Hydrophobic Propriety Alteration using Ion Implantation
[Application] A template used for printing is implanted to change the properties of the materials it is composed of. This …
US 20120288637: Method of Affecting Material Proprieties and Applications
[Application] Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus …
US 20130045339: Techniques for Diamond Nucleation Control for Thin Film Processing
[Application] Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be …
US 20120000421: Control Apparatus for Plasma Immersion Ion Implantation of Dielectric Substrate
[Application] A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a …
US 20110039034: Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
[Application] A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may …
US 20120258583: Method for Epitaxial Layer Overgrowth
[Application] Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the …
US 20130052810: Engineering of Porous Coatings Formed by Ion–Assisted Direct Deposition
[Application] In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions …
US 20120213941: Ion-assisted Plasma Treatment of a Three-dimensional Structure
[Application] A boundary between a plasma and a plasma sheath is controlled such that a portion of the shape is …
US 20120295444: Techniques for Forming 3D Structures
[Application] A technique for forming 3D structures is disclosed. In one particular exemplary embodiment, the technique may be realized as …
US 20120263887: Technique and Apparatus for Ion-Assisted Atomic Layer Deposition
[Application] An apparatus for depositing a coating may comprise a first processing chamber configured to deposit a first reactant as …
US 20110300696: Method for Damage-Free Junction Formation
[Application] Embodiments of this doping method may be used to improve junction formation. An implant species, such as helium or …
US 20120309180: Method of Forming a Retrograde Material Profile Using Ion Implantation
[Application] A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the …
US 20100084583: Reduced Implant Voltage During Ion Implantation
[Application] A method for ion implantation is disclosed which includes decreasing the implant energy level as the implant process is …
US 20110309049: Techniques for Plasma Processing a Substrate
[Application] Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with …
US 20110253902: Molecular Ion Generation
[Application] An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species …
US 20090084987: Charge Neutralization In a Plasma Processing Apparatus
[Application] A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, …
US 20100255683: Plasma Processing Apparatus
[Application] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,003,498: Particle Beam Assisted Modification of Thin Film Materials
[Granted] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 8,697,549: Deposition of Porous Films for Thermoelectric Applications
[Granted] An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In …
US 8,187,979: Workpiece Patterning with Plasma Sheath Modulation
[Granted] Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing …
US 8,461,030: Apparatus and method for controllably implanting workpieces
[Granted] A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that …
US 8,716,682: Apparatus and Method for Multiple Slot Ion Implantation
[Granted] An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to …
US 8,907,307: Apparatus and Method for Maskless Patterned Implantation
[Granted] A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate …
US 8,835,287: Method of Implanting a Workpiece to Improve Growth of a Compound Semiconductor
[Granted] A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted …
US 8,288,255: N-type Doping of Zinc Telluride
[Granted] ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. …
US 8,906,576: Material Engineering for High Performance Li-ion Battery Electrodes
[Granted] A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer …
US 8,778,465: Ion-assisted Direct Growth of Porous Materials
[Granted] Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to …
US 8,133,804: Method and system for modifying patterned photoresist using multi-step ion implantation
[Granted] A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes …
US 8,354,655: Method and System for Controlling Critical Dimension and Roughness in Resist Features
[Granted] A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The …
US 8,435,727: Method and system for modifying photoresist using electromagnetic radiation and ion implantation
[Granted] A method of reducing surface roughness of a resist feature disposed on a substrate includes generating a plasma having …
US 8,460,569: Method and system for post-etch treatment of patterned substrate features
[Granted] A method of patterning a substrate, comprises providing a set of patterned features on the substrate, exposing the set …
US 8,698,109: Method and System for Controlling Critical Dimension and Roughness in Resist Features
[Granted] A computer readable storage medium containing program instructions for treating a photoresist relief feature on a substrate having an …
US 8,778,603: Method and System for Modifying Substrate Relief Features Using Ion Implantation
[Granted] A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned …
US 8,603,591: Enhanced Etch and Deposition Profile Control using Plasma Sheath Engineering
[Granted] A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition …
US 8,815,720: Method of Etching a Workpiece
[Granted] A workpiece is implanted to a first depth to form a first amorphized region. This amorphized region is then …
US 8,858,816: Enhanced Etch and Deposition Profile Control Using Plasma Sheath Engineering
[Granted] A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition …
US 7,927,986: Ion implantation with heavy halogenide compounds
[Granted] A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a …
US 8,124,506: USJ techniques with helium-treated substrates
[Granted] A method of using helium to create ultra shallow junctions is disclosed. A pre-implantation amorphization using helium has significant …
US 8,372,735: USJ Techniques with Helium-Treated Substrates
[Granted] A method of using helium to create ultra-shallow junctions is disclosed. A pre-implantation amorphization using helium has significant advantages. …
US 8,679,960: Technique for Processing a Substrate Having a Non-planar Surface
[Granted] A method of processing a substrate having horizontal and non-horizontal surfaces is disclosed. The substrate is implanted with particles …
US 8,742,373: Method of Ionization
[Granted] A plasma is formed from one or more gases in a plasma chamber using at least a first power …
US 8,728,951: Method and System for Ion Assisted Processing
[Granted] A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas …
US 8,659,229: Plasma Attenuation for Uniformity Control
[Granted] A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, …
US 8,907,300: System and Method for Plasma Control Using Boundary Electrode
[Granted] An ion source may include a chamber configured to house a plasma comprising ions to be directed to a …
US 7,453,059: Technique for monitoring and controlling a plasma process
[Granted] A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned …
US 7,476,849: Technique for monitoring and controlling a plasma process
[Granted] An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: …
US 7,856,100 B2: Closed Loop Control and Process Optimization in Plasma Doping Processes Using Time Of Flight Ion Detector
[Granted] A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant …
US 7,687,787: Profile Adjustment in Plasma Ion Implanter
[Granted] A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction …
US 7,878,145 : Monitoring plasma ion implantation systems for fault detection and process control
[Granted] A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, …
US 8,698,107: Technique and Apparatus for Monitoring Ion Mass, Energy, and Angle in Processing Systems
[Granted] A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and …
US 7,767,977 : Ion Source
[Granted] An ion source includes an arc chamber having an extraction aperture and a plasma sheath modulator. The plasma sheath …
US 8,188,445: Ion Source
[Granted] An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the …
US 8,101,510: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,288,741: Apparatus and Method for Three Dimensional Ion Processing
[Granted] A method for treating a workpiece. The method includes directing a first ion beam to a first region of …
US 8,592,230: Method for patterning a substrate using ion assisted selective deposition
[Granted] A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, …
US 8,623,171: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,664,098: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate …