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US 9,512,517: Multiple Exposure Treatment for Processing a Patterning Feature

A method for processing a substrate may include providing a patterning feature on the substrate, the patterning feature having a …

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US 9,425,027: Methods of Affecting Material Properties and Applications

Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus with …

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US 9,377,692: Electric/magnetic Field Guided Acid Diffusion

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid …

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US 9,062,367: Plasma Processing of Workpieces to Form a Coating

A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is …

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US 8,974,683: Method and System for Modifying Resist Openings using Multiple Angled Ions

A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises …

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US 8,969,181: Method for Epitaxial Layer Overgrowth

Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions …

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US 8,946,061: Engineering of Porous Coatings Formed by Ion-assisted Direct Deposition

In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that …

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US 20090124064: Particle Beam Assisted Modification Of Thin Film Materials

[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …

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US 20090124065: Particle Beam Assisted Modification Of Thin Film Materials

[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …

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US 20120137971: Hydrophobic Propriety Alteration using Ion Implantation

[Application] A template used for printing is implanted to change the properties of the materials it is composed of. This …

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US 20120288637: Method of Affecting Material Proprieties and Applications

[Application] Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus …

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US 20130045339: Techniques for Diamond Nucleation Control for Thin Film Processing

[Application] Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be …

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US 20120000421: Control Apparatus for Plasma Immersion Ion Implantation of Dielectric Substrate

[Application] A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a …

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US 20110039034: Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material

[Application] A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may …

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US 20120258583: Method for Epitaxial Layer Overgrowth

[Application] Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the …

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US 20130052810: Engineering of Porous Coatings Formed by Ion–Assisted Direct Deposition

[Application] In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions …

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US 8,003,498: Particle Beam Assisted Modification of Thin Film Materials

[Granted] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …

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US 8,697,549: Deposition of Porous Films for Thermoelectric Applications

[Granted] An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In …

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US 8,187,979: Workpiece Patterning with Plasma Sheath Modulation

[Granted] Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing …

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US 8,461,030: Apparatus and method for controllably implanting workpieces

[Granted] A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that …

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US 8,716,682: Apparatus and Method for Multiple Slot Ion Implantation

[Granted] An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to …

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US 8,907,307: Apparatus and Method for Maskless Patterned Implantation

[Granted] A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate …

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US 8,835,287: Method of Implanting a Workpiece to Improve Growth of a Compound Semiconductor

[Granted] A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted …

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US 8,288,255: N-type Doping of Zinc Telluride

[Granted] ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. …

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US 8,906,576: Material Engineering for High Performance Li-ion Battery Electrodes

[Granted] A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer …

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US 8,778,465: Ion-assisted Direct Growth of Porous Materials

[Granted] Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to …

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