A method for processing a substrate may include providing a patterning feature on the substrate, the patterning feature having a …
US 9,425,027: Methods of Affecting Material Properties and Applications
Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus with …
US 9,377,692: Electric/magnetic Field Guided Acid Diffusion
Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid …
US 9,062,367: Plasma Processing of Workpieces to Form a Coating
A surface of an insulating workpiece is implanted to form either hydrophobic or hydrophilic implanted regions. A conductive coating is …
US 8,974,683: Method and System for Modifying Resist Openings using Multiple Angled Ions
A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises …
US 8,969,181: Method for Epitaxial Layer Overgrowth
Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the ions …
US 8,946,061: Engineering of Porous Coatings Formed by Ion-assisted Direct Deposition
In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions that …
US 20090124064: Particle Beam Assisted Modification Of Thin Film Materials
[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 20090124065: Particle Beam Assisted Modification Of Thin Film Materials
[Application] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 20120137971: Hydrophobic Propriety Alteration using Ion Implantation
[Application] A template used for printing is implanted to change the properties of the materials it is composed of. This …
US 20120288637: Method of Affecting Material Proprieties and Applications
[Application] Methods of affecting a material’s properties through the implantation of ions, such as by using a plasma processing apparatus …
US 20130045339: Techniques for Diamond Nucleation Control for Thin Film Processing
[Application] Techniques for diamond nucleation control for thin film processing are disclosed. In one particular embodiment, the techniques may be …
US 20120000421: Control Apparatus for Plasma Immersion Ion Implantation of Dielectric Substrate
[Application] A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a …
US 20110039034: Pulsed deposition and recrystallization and tandem solar cell design utilizing crystallized/amorphous material
[Application] A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may …
US 20120258583: Method for Epitaxial Layer Overgrowth
[Application] Oxygen, silicon, germanium, carbon, or nitrogen is selectively implanted into a workpiece. The workpiece is annealed to incorporate the …
US 20130052810: Engineering of Porous Coatings Formed by Ion–Assisted Direct Deposition
[Application] In one embodiment, a method of producing a porous semiconductor film on a workpiece includes generating semiconductor precursor ions …
US 8,003,498: Particle Beam Assisted Modification of Thin Film Materials
[Granted] Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include: …
US 8,697,549: Deposition of Porous Films for Thermoelectric Applications
[Granted] An improved method of creating thermoelectric materials which have high electrical conductivity and low thermal conductivity is disclosed. In …
US 8,187,979: Workpiece Patterning with Plasma Sheath Modulation
[Granted] Methods to texture or fabricate workpieces are disclosed. The workpiece may be, for example, a solar cell. This texturing …
US 8,461,030: Apparatus and method for controllably implanting workpieces
[Granted] A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that …
US 8,716,682: Apparatus and Method for Multiple Slot Ion Implantation
[Granted] An ion implantation system may comprise a plasma source for providing a plasma and a workpiece holder arranged to …
US 8,907,307: Apparatus and Method for Maskless Patterned Implantation
[Granted] A method of implanting a workpiece in an ion implantation system. The method may include providing an extraction plate …
US 8,835,287: Method of Implanting a Workpiece to Improve Growth of a Compound Semiconductor
[Granted] A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted …
US 8,288,255: N-type Doping of Zinc Telluride
[Granted] ZnTe is implanted with a first species selected from Group III and a second species selected from Group VII. …
US 8,906,576: Material Engineering for High Performance Li-ion Battery Electrodes
[Granted] A method of treating an electrode for a battery to enhance its performance is disclosed. By depositing a layer …
US 8,778,465: Ion-assisted Direct Growth of Porous Materials
[Granted] Methods of creating porous materials, such as silicon, are described. In some embodiments, plasma sheath modification is used to …