A guard aperture is described to control the ion angular distribution in plasma processing in one example a workpiece processing …
US 9,502,262: Nanocrystalline Diamond Carbon Film for 3D NAND Hardmask Application
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. …
US 9,502,258: Anisotropic Gap Etch
A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap …
US 9,480,140: Material Modification by Neutral Beam Source with Selected Collision Angle
A neutral beam is scanned across a workpiece surface and the beam angle is controlled in a manner that avoids …
US 9,460,961: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a copper layer disposed on a substrate includes directing reactive ions to the …
US 9,396,965: Techniques and Apparatus for Anisotropic Metal Etching
In one embodiment, a method for etching a metal layer on a substrate may include providing a hydrogen-containing gas and …
US 9,336,998: Apparatus and Method for Dynamic Control of Ion Beam Energy and Angle
In one embodiment a method of etching a substrate includes directing a first ion beam to the substrate through an …
US 9,293,301: In Situ Control of Ion Angular Distribution in a Processing Apparatus
A processing apparatus may include a plasma source coupled to a plasma chamber to generate a plasma in the plasma …
US 9,288,889: Apparatus and Techniques for Energetic Neutral Beam Processing,
A processing system includes a plasma source chamber to generate a plasma; an extraction assembly adjacent the plasma source chamber …
US 9,280,070: Field guided exposure and post-exposure bake process
Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application may control the …
US 9,253,868: Neutral Beam Source with Plasma Sheath-Shaping Neutralization
A neutral beam source has a plasma sheath-shaping neutralization grid that shapes a plasma sheath near a beam-forming slit of …
US 9,232,628: Method and System for Plasma –Assisted Ion Beam Processing
A system for processing a substrate may include a first chamber operative to define a first plasma and a second …
US 9,136,096: Three-Dimensional Metal Deposition Technique
A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a …
US 9,123,509: Techniques for Plasma Processing a Substrate
Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with a …
US 9,024,282: Techniques and Apparatus for High Rate Hydrogen Implantation and Co-implant
An apparatus for hydrogen and helium implantation is disclosed. The apparatus includes a plasma source system to generate helium ions …
US 9,024,273: Method to Generate Molecular Ions from Ions with a Smaller Atomic Mass
An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is …
US 8,937,004: Apparatus and Method for Controlling Implanting Workpieces
A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the …
US 20100084583: Reduced Implant Voltage During Ion Implantation
[Application] A method for ion implantation is disclosed which includes decreasing the implant energy level as the implant process is …
US 20110309049: Techniques for Plasma Processing a Substrate
[Application] Techniques for plasma processing a substrate are disclosed. In one particular exemplary embodiment, the technique may be realized with …
US 20110253902: Molecular Ion Generation
[Application] An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species …
US 20090084987: Charge Neutralization In a Plasma Processing Apparatus
[Application] A plasma processing apparatus includes a process chamber, a source configured to generate a plasma in the process chamber, …
US 20100255683: Plasma Processing Apparatus
[Application] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,728,951: Method and System for Ion Assisted Processing
[Granted] A method of processing a substrate includes performing a first exposure that comprises generating a plasma containing reactive gas …
US 8,659,229: Plasma Attenuation for Uniformity Control
[Granted] A plasma processing apparatus and method are disclosed which create a uniform plasma within an enclosure. In one embodiment, …
US 8,907,300: System and Method for Plasma Control Using Boundary Electrode
[Granted] An ion source may include a chamber configured to house a plasma comprising ions to be directed to a …
US 7,453,059: Technique for monitoring and controlling a plasma process
[Granted] A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned …
US 7,476,849: Technique for monitoring and controlling a plasma process
[Granted] An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: …
US 7,856,100 B2: Closed Loop Control and Process Optimization in Plasma Doping Processes Using Time Of Flight Ion Detector
[Granted] A method of controlling a plasma doping process using a time-of-flight ion detector includes generating a plasma comprising dopant …
US 7,687,787: Profile Adjustment in Plasma Ion Implanter
[Granted] A method to provide a dopant profile adjustment solution in plasma doping systems for meeting both concentration and junction …
US 7,878,145 : Monitoring plasma ion implantation systems for fault detection and process control
[Granted] A plasma ion implantation system includes a process chamber, a source for producing a plasma in the process chamber, …
US 8,698,107: Technique and Apparatus for Monitoring Ion Mass, Energy, and Angle in Processing Systems
[Granted] A time-of-flight (TOF) ion sensor system for monitoring an angular distribution of ion species having an ion energy and …
US 7,767,977 : Ion Source
[Granted] An ion source includes an arc chamber having an extraction aperture and a plasma sheath modulator. The plasma sheath …
US 8,188,445: Ion Source
[Granted] An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the …
US 8,101,510: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,288,741: Apparatus and Method for Three Dimensional Ion Processing
[Granted] A method for treating a workpiece. The method includes directing a first ion beam to a first region of …
US 8,592,230: Method for patterning a substrate using ion assisted selective deposition
[Granted] A method of patterning a substrate includes providing a focusing plate adjacent to a plasma chamber containing a plasma, …
US 8,623,171: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, …
US 8,664,098: Plasma Processing Apparatus
[Granted] A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate …