Conference Proceedings

2010:

“Ion Implant Enabled 2x Lithography”, P. Martin, L. Godet, A. Cheung, G. de Cock, C. Hatem, IIT 2010

” Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques”, G. Papasouliotis, L. Godet, V. SIngh, R. Muira, H. Ito, IIT 2010

“Optimization and Control of Plasma Doping Processes”, D. Raj, L. Godet, N. Chamberlain, K. Hadidi, V. Singh, G. Papasouliotis, IIT 2010

2009:

“Advanced dopant profile control for plasma doping processes”, L.Godet, S. Qin, Z. Fang, G.D. Papasouliotis, T. Miller, V. Singh, S. Radovanov, Gaseous Electronics Conference 2009, 19-23 October, USA

“Ultra-shallow junction formation using plasma doping techniques”, L. Godet, G.D. Papasouliotis, A. Kontos, T. Miller, V. Singh, Varian, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling, 2009, Napa CA

2008:

“Ultra-shallow junction formation using flash annealing and advanced doping techniques”, J. Gelpey, S. McCoy, A. Kontos, L. Godet, C. Hatem and al, Junction Technology, 15 may 2008, IEEE page 82-86

“Approaches to USJ formation by Molecular Implantation”, C. Hatem, L. Godet, A. Kontos, G. Papasouliotis, J. England, and E. Arevalo, IIT 2008

“Plasma Doping – Enabling Technology for High Dose Logic and Memory Applications”, T. Miller, L. Godet, G. Papasouliotis, V. Singh, IIT 2008

“Negative ion extraction from a pulsed rf plasma through NF3”, S. Radovanov, L. Godet, R. Dorai, V. Singh, Gaseous Electronics Conference 2008, 13-17 October, Texas, USA

2007:

“Advanced optimization and process control of plasma doping apparatus”, V. Singh, L.Godet, T. Miller, R. Dorai, G. D.Papasouliotis, Plasma based ion implantation 2007, Leipzig, Germany

“Plasma-Based Low Energy Ion Implantation”, Ludovic Godet, Gaseous Electronics Conference 2007, 2-5 October, Arlington, Virginia, USA

2006:

“Generation of Negative Ions in Pulsed Boron Trifluoride Glow Discharge”, Gaseous Electronics Conference, Ohio, 2006

“Ion Energy Distribution Measured in Pulsed Boron Trifluoride Glow Discharge”, Gaseous Electronics Conference, Ohio, 2006

“Plasma treatment of bulk Niobium Surface”, Gaseous Electronics Conference, Ohio, 2006

2005:

“Plasma diagnostics in pulsed plasma doping system for Ultra-Low-Energy BF3 implantation” CIP 2005, Autrans, France

“Plasma Diagnostics in a pulsed plasma doping system” JDOC, Doctoral school presentation, France

“Radial distributions of plasma parameters in BF3”, Gaseous Electronics Conference, San Jose, Oct 2005

“Time resolved energy distribution of ions from a cathode sheath in a plasma doping system in BF3”, Gaseous Electronics Conference, San Jose, Oct 2005

“PLAD Dopant Depth Profile Based on Ion Mass and Energy Distribution for Ultra Low Energy Implantation, AVS 52st International Symposium, Boston, Nov 2005

2004:

“Ultra low-energy BF3 plasma doping characterization by ion mass and energy spectrometry”, ICOPS 2004, 31th International Conference On plasma Science, June 2004, Baltimore

“Investigations of a pulsed plasma doping (P2LAD) system by time resolved mass and energy spectrometry”, Gaseous Electronics Conference, Ireland, 2004

“Temporal behavior of low pressure, pulsed plasmas in argon and boron tri-fluoride”, Gaseous Electronics Conference, Ireland, 2004

2003:

“Study of pulsed plasma doping system by time –resolved ion mass-energy spectrometry”, AVS 50th International Symposium, Baltimore, Nov 2003